TrainCamp_zhangzhiwei_duandianxvchuan/ddxc/SYSTEM/stmflash.c

#include "stmflash.h"
#include "delay.h"
#include "usart.h"
//读取指定地址的字(32位数据) 
//faddr:读地址 
//返回值:对应数据.
u32 STMFLASH_ReadWord(u32 faddr)
{
	return *(__IO uint32_t *)faddr; 
}

//获取某个地址所在的flash扇区
//addr:flash地址
//返回值:0~11,即addr所在的扇区
uint16_t STMFLASH_GetFlashSector(u32 addr)
{
	if(addr<ADDR_FLASH_SECTOR_1)return FLASH_SECTOR_0;
	else if(addr<ADDR_FLASH_SECTOR_2)return FLASH_SECTOR_1;
	else if(addr<ADDR_FLASH_SECTOR_3)return FLASH_SECTOR_2;
	else if(addr<ADDR_FLASH_SECTOR_4)return FLASH_SECTOR_3;
	else if(addr<ADDR_FLASH_SECTOR_5)return FLASH_SECTOR_4;
	else if(addr<ADDR_FLASH_SECTOR_6)return FLASH_SECTOR_5;
	else if(addr<ADDR_FLASH_SECTOR_7)return FLASH_SECTOR_6;
    else if(addr<ADDR_FLASH_SECTOR_8)return FLASH_SECTOR_7;
	else if(addr<ADDR_FLASH_SECTOR_9)return FLASH_SECTOR_8;
	else if(addr<ADDR_FLASH_SECTOR_10)return FLASH_SECTOR_9;
	else if(addr<ADDR_FLASH_SECTOR_11)return FLASH_SECTOR_10;
    else if(addr<ADDR_FLASH_SECTOR_12)return FLASH_SECTOR_11;
	else if(addr<ADDR_FLASH_SECTOR_13)return FLASH_SECTOR_12;
	else if(addr<ADDR_FLASH_SECTOR_14)return FLASH_SECTOR_13;
	else if(addr<ADDR_FLASH_SECTOR_15)return FLASH_SECTOR_14;
	else if(addr<ADDR_FLASH_SECTOR_16)return FLASH_SECTOR_15;
	else if(addr<ADDR_FLASH_SECTOR_17)return FLASH_SECTOR_16;
    else if(addr<ADDR_FLASH_SECTOR_18)return FLASH_SECTOR_17;
	else if(addr<ADDR_FLASH_SECTOR_19)return FLASH_SECTOR_18;
	else if(addr<ADDR_FLASH_SECTOR_20)return FLASH_SECTOR_19;
	else if(addr<ADDR_FLASH_SECTOR_21)return FLASH_SECTOR_20;
	else if(addr<ADDR_FLASH_SECTOR_22)return FLASH_SECTOR_21;
	else if(addr<ADDR_FLASH_SECTOR_23)return FLASH_SECTOR_22;    
	return FLASH_SECTOR_23;	
}

//从指定地址开始写入指定长度的数据
//特别注意:因为STM32F7的扇区实在太大,没办法本地保存扇区数据,所以本函数
//         写地址如果非0XFF,那么会先擦除整个扇区且不保存扇区数据.所以
//         写非0XFF的地址,将导致整个扇区数据丢失.建议写之前确保扇区里
//         没有重要数据,最好是整个扇区先擦除了,然后慢慢往后写. 
//该函数对OTP区域也有效!可以用来写OTP区!
//OTP区域地址范围:0X1FF0F000~0X1FF0F41F
//WriteAddr:起始地址(此地址必须为4的倍数!!)
//pBuffer:数据指针
//NumToWrite:字(32位)数(就是要写入的32位数据的个数.) 
void STMFLASH_Write(u32 WriteAddr,u32 *pBuffer,u32 NumToWrite)	
{ 
//    FLASH_EraseInitTypeDef FlashEraseInit;
    HAL_StatusTypeDef FlashStatus=HAL_OK;
//    u32 SectorError=0;
//	u32 addrx=0;
	u32 endaddr=0;	
    if(WriteAddr<STM32_FLASH_BASE||WriteAddr%4)return;	//非法地址
    
 	HAL_FLASH_Unlock();             //解锁	
//	addrx=WriteAddr;				//写入的起始地址
	endaddr=WriteAddr+NumToWrite*4;	//写入的结束地址
    
//    if(addrx<0X1FF00000)
//    {   
//        while(addrx<endaddr)		//扫清一切障碍.(对非FFFFFFFF的地方,先擦除)
//		{
//			if(STMFLASH_ReadWord(addrx)!=0XFFFFFFFF)//有非0XFFFFFFFF的地方,要擦除这个扇区
//			{   
//                FlashEraseInit.TypeErase=FLASH_TYPEERASE_SECTORS;       //擦除类型，扇区擦除 
//                FlashEraseInit.Sector=STMFLASH_GetFlashSector(addrx);   //要擦除的扇区
//                FlashEraseInit.NbSectors=1;                             //一次只擦除一个扇区
//                FlashEraseInit.VoltageRange=FLASH_VOLTAGE_RANGE_3;      //电压范围，VCC=2.7~3.6V之间!!
//                if(HAL_FLASHEx_Erase(&FlashEraseInit,&SectorError)!=HAL_OK) 
//                {
//                    break;//发生错误了	
//                }
//                //SCB_CleanInvalidateDCache();                            //清除无效的D-Cache
//			}else addrx+=4;
//            FLASH_WaitForLastOperation(FLASH_WAITETIME);                //等待上次操作完成
//        }
//    }
//    FlashStatus=FLASH_WaitForLastOperation(FLASH_WAITETIME);            //等待上次操作完成
	if(FlashStatus==HAL_OK)
	{
		while(WriteAddr<endaddr)//写数据
		{
            if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD,WriteAddr,*pBuffer)!=HAL_OK)//写入数据
			{ 
				break;	//写入异常
			}
			WriteAddr+=4;
			pBuffer++;
		} 
	}
	HAL_FLASH_Lock();           //上锁
} 

//从指定地址开始读出指定长度的数据
//ReadAddr:起始地址
//pBuffer:数据指针
//NumToRead:字(32位)数
void STMFLASH_Read(u32 ReadAddr,u32 *pBuffer,u32 NumToRead)   	
{
	u32 i;
	for(i=0;i<NumToRead;i++)
	{
		pBuffer[i]=STMFLASH_ReadWord(ReadAddr);//读取4个字节.
		ReadAddr+=4;//偏移4个字节.	
	}
}

//擦掉0x08040000之后的区域
void ersae_all()
{
    printf("擦除Flash中...\r\n");
    HAL_FLASH_Unlock();  
    FLASH_EraseInitTypeDef FlashEraseInit;
    u32 SectorError=0;
    FlashEraseInit.TypeErase=FLASH_TYPEERASE_SECTORS ;       //擦除类型，扇区擦除 
    FlashEraseInit.Sector=STMFLASH_GetFlashSector(0x08040000);   //要擦除的扇区
    FlashEraseInit.NbSectors=18;                             //一次只擦除一个扇区
    FlashEraseInit.VoltageRange=FLASH_VOLTAGE_RANGE_3;      //电压范围，VCC=2.7~3.6V之间!!
    HAL_FLASHEx_Erase(&FlashEraseInit,&SectorError);
    HAL_FLASH_Lock(); 
    printf("擦除Flash完成\r\n");
}

void write(u32 WriteAddr,u32 *pBuffer)
{
   
	u32 endaddr=0;	
  
    HAL_FLASH_Unlock();             //解锁	
	//WriteAddr;				//写入的起始地址
	endaddr=WriteAddr+0x40000;	//写入的结束地址
  
    while(WriteAddr<endaddr)//写数据
    {
        if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD,WriteAddr,*pBuffer)!=HAL_OK)//写入数据
        { 
            break;	//写入异常
        }
        WriteAddr+=4;
        pBuffer++;
    } 
    HAL_FLASH_Lock();           //上锁
}